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EM680FU16A Series Low Power, 512Kx16 SRAM Document Title 512K x16 bit Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. 0.0 0.1 History Initial Draft 0.1 Revision Draft Date Sep. 28 , 2007 Remark Preliminary Fix typo error Nov. 12, 2007 Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Tel : +82-64-740-1712 Fax : +82-64-740-1749~1750 / Homepage : www.emlsi.com Zip Code : 690-719 The attached data sheets are provided by EMLSI reserve the right to change the specifications and products. EMLSI will answer to your questions about device. If you have any questions, please contact the EMLSI office. 1 EM680FU16A Series Low Power, 512Kx16 SRAM FEATURES * * * * * * Process Technology : 0.15m Full CMOS Organization : 512K x 16 bit Power Supply Voltage : 2.7V ~ 3.3V Low Data Retention Voltage : 1.5V(Min.) Three state output and TTL Compatible Package Type : 48-FPBGA 8.0x10.0 GENERAL DESCRIPTION The EM680FU16A families are fabricated by EMLSI's advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current. PRODUCT FAMILY Power Dissipation Product Family EM680FU16A-45LF EM680FU16A-55LF EM680FU16A-70LF Operating Temperature Industrial (-40 ~ 85oC) Industrial (-40 ~ 85oC) Industrial (-40 ~ 85oC) Vcc Range 2.7V~3.3V 2.7V~3.3V 2.7V~3.3V Speed Standby (ISB1, Typ.) 2 A 2 A 2 A Operating (ICC1.Max) 3mA 3mA 3mA PKG Type 48-FPBGA 48-FPBGA 48-FPBGA 45ns 55ns 70ns PIN DESCRIPTION 1 A B C D E F G H 2 3 4 5 6 FUNCTIONAL BLOCK DIAGRAM Pre-charge Circuit LB I/O9 OE UB A0 A3 A5 A17 DNU A14 A12 A9 A1 A4 A6 A7 A16 A15 A13 A10 A2 CS1 I/O2 I/O4 I/O5 I/O6 WE A11 CS2 Row Select I/O1 I/O3 VCC VSS I/O7 I/O8 I/O10 I/O11 VSS VCC I/O12 I/O13 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 VCC VSS Memory Array 2048 x 4096 I/O1 ~ I/O8 I/O9 ~ I/O16 Data Cont Data Cont I/O Circuit Column Select I/O15 I/O14 I/O16 DNU A18 A8 A11 A12 A13 A14 A15 A16 A17 A18 DNU WE OE UB LB CS1 CS2 48-FPBGA : Top view (ball down) Control Logic Name Function Name Vcc Vss UB LB Function Power Supply Ground Upper Byte (I/O9~16) Lower Byte (I/O1~8) CS1,CS2 Chip select inputs OE WE A0~A18 Output Enable input Write Enable input Address Inputs I/O1~I/O16 Data Inputs/outputs DNU Do Not Use 2 EM680FU16A Series Low Power, 512Kx16 SRAM ABSOLUTE MAXIMUM RATINGS * Parameter Voltage on Any Pin Relative to Vss Voltage on Vcc supply relative to Vss Power Dissipation Operating Temperature Symbol VIN, VOUT VCC PD TA Minimum -0.2 to 4.0V -0.2 to 4.0V 1.0 -40 to 85 Unit V V W o C * Stresses greater than those listed above "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability. FUNCTIONAL DESCRIPTION CS1 H X X L L L L L L L L CS2 X L X H H H H H H H H OE X X X H H L L L X X X WE X X X H H H H H L L L LB X X H L X L H L L H L UB X X H X L H L L H L L I/O1-8 High-Z High-Z High-Z High-Z High-Z Data Out High-Z Data Out Data In High-Z Data In I/O9-16 High-Z High-Z High-Z High-Z High-Z High-Z Data Out Data Out High-Z Data In Data In Mode Deselected Deselected Deselected Output Disabled Output Disabled Lower Byte Read Upper Byte Read Word Read Lower Byte Write Upper Byte Write Word Write Power Stand by Stand by Stand by Active Active Active Active Active Active Active Active NOTE: X means don't care. (Must be low or high state) 3 EM680FU16A Series Low Power, 512Kx16 SRAM RECOMMENDED DC OPERATING CONDITIONS 1) Parameter Supply voltage Ground Input high voltage Input low voltage 1. 2. 3. 4. Symbol VCC VSS VIH VIL Min 2.7 0 2.2 -0.23) Typ 3.0 0 - Max 3.3 0 VCC + 0.22) 0.6 Unit V V V V TA= -40 to 85oC, otherwise specified. Overshoot: VCC +2.0 V in case of pulse width < 20ns Undershoot: -2.0 V in case of pulse width < 20ns Overshoot and undershoot are sampled, not 100% tested. CAPACITANCE1) (f =1MHz, TA=25oC) Item Input capacitance Input/Ouput capacitance 1. Capacitance is sampled, not 100% tested Symbol CIN CIO Test Condition VIN=0V VIO=0V Min - Max 8 10 Unit pF pF DC AND OPERATING CHARACTERISTICS Parameter Input leakage current Output leakage current Operating power supply Symbol ILI ILO ICC ICC1 Average operating current ICC2 VIN=VSS to VCC CS1=VIH or CS2=VIL or OE=VIH or WE=VIL or LB=UB=VIH VIO=VSS to VCC IIO=0mA, CS1=VIL, CS2=WE=VIH, VIN=VIH or VIL Cycle time=1s, 100% duty, IIO=0mA, CS1<0.2V, LB<0.2V or/and UB<0.2V, CS2>VCC-0.2V, VIN<0.2V or VIN>VCC-0.2V Cycle time = Min, IIO=0mA, 100% duty, CS1=VIL, CS2=VIH, LB=VIL or/and UB=VIL , VIN=VIL or VIH IOL = 2.1mA IOH = -1.0mA CS1=VIH, CS2=VIL, Other inputs=VIH or VIL CS1>VCC-0.2V, CS2>VCC-0.2V (CS1 controlled) or 0V Min -1 -1 45ns 55ns 70ns 2.2 - Typ - Max 1 1 3 3 40 30 20 0.4 0.3 Unit uA uA mA mA mA Output low voltage Output high voltage Standby Current (TTL) VOL VOH ISB V V mA Standby Current (CMOS) ISB1 LF - 2 15 uA 4 EM680FU16A Series Low Power, 512Kx16 SRAM VTM3) R12) AC OPERATING CONDITIONS Test Conditions (Test Load and Test Input/Output Reference) Input Pulse Level : 0.4 to 2.2V Input Rise and Fall Time : 5ns Input and Output reference Voltage : 1.5V Output Load (See right) : CL = 100pF+ 1 TTL (70ns) CL1) = 30pF + 1 TTL (45ns/55ns) 1. Including scope and Jig capacitance R2=3150 ohm 2. R1=3070 ohm, 3. VTM=2.8V 4. CL = 5pF + 1 TTL (measurement with tLZ1,2, tHZ12, tOLZ, tOHZ, tWHZ) CL1) R22) READ CYCLE (Vcc =2.7 to 3.3V, Gnd = 0V, TA = -40oC to +85oC) Parameter Read cycle time Address access time Chip select to output Output enable to valid output UB, LB Access time Chip select to low-Z output UB, LB enable to low-Z output Output enable to low-Z output Chip disable to high-Z output UB, LB disable to high-Z output Output disable to high-Z output Output hold from address change Symbol tRC tAA tCO1, tCO2 tOE tBA tLZ1, tLZ2 tBLZ tOLZ tHZ1, tHZ2 tBHZ tOHZ tOH 45ns Min 45 5 5 5 0 0 0 10 Max 45 45 30 45 20 20 20 Min 55 5 5 5 0 0 0 10 55ns Max 55 55 35 55 20 20 20 Min 70 5 5 5 0 0 0 10 70ns Max 70 70 35 70 25 25 25 - Unit ns ns ns ns ns ns ns ns ns ns ns ns WRITE CYCLE (Vcc =2.7 to 3.3V, Gnd = 0V, TA = -40oC to +85oC) Parameter Write cycle time Chip select to end of write Address setup time Address valid to end of write UB, LB valid to end of write Write pulse width Write recovery time Write to ouput high-Z Data to write time overlap Data hold from write time End write to output low-Z Symbol tWC tCW1, tCW2 tAS tAW tBW tWP tWR tWHZ tDW tDH tOW 45ns Min 45 45 0 45 45 45 0 0 25 0 5 Max 20 Min 55 45 0 45 45 45 0 0 30 0 5 55ns Max 20 Min 70 60 0 60 60 55 0 0 30 0 5 70ns Max 25 - Unit ns ns ns ns ns ns ns ns ns ns ns 5 EM680FU16A Series Low Power, 512Kx16 SRAM TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1). (Address Controlled, CS1=OE=VIL, tRC Address tAA tOH Data Out Previous Data Valid Data Valid CS2=WE=VIL) TIMING WAVEFORM OF READ CYCLE(2) (WE = VIH) tRC Address tAA CS1 CS2 tBA UB,LB tOE OE tOLZ Data Valid tOH tCO1,2 tHZ1,2 tBHZ tOHZ Data Out High-Z tBLZ tLZ1,2 NOTES (READ CYCLE) 1. tHZ1,2 and tOHZ are defined as the outputs achieve the open circuit conditions and are not referanced to output voltage levels. 2. At any given temperature and voltage condition, tHZ1,2(Max.) is less than tLZ1,2(Min.) both for a given device and from device to device interconnection. 6 EM680FU16A Series Low Power, 512Kx16 SRAM TIMING WAVEFORM OF WRITE CYCLE(1) (WE CONTROLLED) tWC Address tCW1,2(2) CS1 CS2 tAW tBW UB,LB tWP(1) WE tAS(3) Data in High-Z tWHZ Data out Data Undefined tDW Data Valid tWR(4) tDH High-Z tOW TIMING WAVEFORM OF WRITE CYCLE(2) (CS1 CONTROLLED) tWC Address tAS(3) CS1 CS2 tAW tBW UB,LB tWP(1) WE tDW Data in Data Valid tCW1,2(2) tWR(4) tDH Data out High-Z High-Z 7 EM680FU16A Series Low Power, 512Kx16 SRAM TIMING WAVEFORM OF WRITE CYCLE(3) (UB, LB CONTROLLED) tWC Address tCW1,2(2) CS1 tWR(4) CS2 tAW tBW UB,LB tAS(3) WE tDW Data in Data out High-Z Data Valid tWP(1) tDH High-Z NOTES (WRITE CYCLE) 1. A write occurs during the overlap(tWP) of low CS1, a high CS2 and low WE. A write begins at the latest transition among CS1 goes low, CS2 goes high and WE goes low. A write ends at the earliest transition among CS1 goes high, CS2 goes low and WE goes high. The tWP is measured from the beginning of write to the end of write. 2. tCW1 is measured from the CS1 going low or CS2 going high to end of write. 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end or write to the address change. tWR applied in case a write ends as CS1 or WE going high or CS2 going low. 8 EM680FU16A Series Low Power, 512Kx16 SRAM DATA RETENTION CHARACTERISTICS Parameter VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time Symbol VDR IDR tSDR tRDR Test Condition CS1 Vcc-0.2V 1) VCC=1.5V, CS1 Vcc-0.2V 1) See data retention wave form Min 1.5 0 tRC Typ - Max 3.3 4 - Unit V uA ns 1. CS1 Vcc-0.2V , CS2 Vcc-0.2V (CS1 controlled) or CS2 < 0.2V (CS2 controlled) DATA RETENTION WAVE FORM tSDR Vcc 2.7V tRDR Data Retention Mode 2.2V VDR CS1, LB / UB GND CS1 > Vcc-0.2V Vcc 2.7V CS2 VDR 0.4V GND tSDR Data Retention Mode tRDR CS2 < 0.2V 9 EM680FU16A Series Low Power, 512Kx16 SRAM Unit: millimeters PACKAGE DIMENSION 48 Ball Fine Pitch BGA (0.75mm ball pitch) Top View B 6 A #A1 B C C C1 C B/2 D E C1/2 F G H 5 4 Bottom View B B1 3 2 1 0.5 A1 index Mark Side View 0.26 E2 D 0.25 Typ. Detail A A Y E E1 Min A B B1 C C1 D E E1 E2 Y 7.90 9.90 0.30 1.00 - Typ 0.75 8.00 3.75 10.00 5.25 0.35 1.04 0.79 0.25 - Max 8.10 10.10 0.40 1.10 0.08 NOTES. 1. Bump counts : 48(8row x 6column) 2. Bump pitch : (x,y)=(0.75x0.75) (typ.) 3. All tolerence are +/-0.050 unless otherwise specified. 4. Typ : Typical 5. Y is coplanarity : 0.08(Max) 10 0.79Typ. C 0.5 EM680FU16A Series Low Power, 512Kx16 SRAM SRAM PART CODING SYSTEM EM X XX X X X XX X X - XX XX 1. EMLSI Memory 2. Product Type 3. Density 4. Function 5. Technology 6. Operating Voltage 1. Memory Component EM --------------------- Memory 2. Product Type 6 ------------------------ SRAM 3. Density 1 ------------------------- 1M 2 ------------------------- 2M 4 ------------------------- 4M 8 ------------------------- 8M 4. Function 0 ----------------------- Dual CS 1 ----------------------- Single CS 2 ----------------------- Multiplexed 3 ------------- Single CS / LBB, UBB(tBA=tOE) 4 ------------- Single CS / LBB, UBB(tBA=tCO) 5 ------------- Dual CS / LBB, UBB(tBA=tOE) 6 ------------- Dual CS / LBB, UBB(tBA=tCO) 5. Technology F ------------------------- Full CMOS 6. Operating Voltage T ------------------------- 5.0V V ------------------------- 3.3V U ------------------------- 3.0V S ------------------------- 2.5V R ------------------------- 2.0V P ------------------------- 1.8V 11. Power 10. Speed 9. Package 8. Generation 7. Organization 7. Organization 8 ---------------------- x8 bit 16 ---------------------- x16 bit 8. Generation Blank ----------------A ----------------------B ----------------------C ----------------------D ----------------------E ----------------------F ----------------------G ---------------------1st generation 2nd generation 3rd generation 4th generation 5th generation 6th generation 7th generation 8th generation 9. Package Blank ---------------- KGD, 48&36FpBGA S ---------------------- 32 sTSOP1 T ---------------------- 32 TSOP1 U ---------------------- 44 TSOP2 V ---------------------- 32 SOP 10. Speed 45 ---------------------55 ---------------------70 ---------------------85 ---------------------10 ---------------------12 ---------------------45ns 55ns 70ns 85ns 100ns 120ns 11. Power LL ---------------------- Low Low Power LF ---------------------- Low Low Power(Pb-Free & Green) L ---------------------- Low Power S ---------------------- Standard Power 11 |
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